SPW11N60S5 Infineon Technologies, SPW11N60S5 Datasheet - Page 3

• Manufacturer Part Number: SPW11N60S5
• Description: MOSFET N-CH 600V 11A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW11N60S5

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5.5V @ 500µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1460pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000012462; SPW11N60S5; SPW11N60S5IN; SPW11N60S5X; SPW11N60S5XK

Please note the new package dimensions arccording to PCN 2009-134-A
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Repetitve avalanche causes additional power losses that can be calculated as P
2 C
3 C
Rev. 2.4
Electrical Characteristics , at T
Parameter
Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
2)
3)
Q
Q
Q
V
Symbol
g
C
C
C
C
C
t
t
t
t
d(on)
r
d(off)
f
j
(plateau)
fs
gs
gd
g
iss
oss
rss
o(er)
o(tr)
= 25 °C, unless otherwise specified
V
V
V
V
V
I
V
f=1MHz
V
V
V
I
Page 3
D
D
DD
DD
GS
DD
DS
GS
GS
DS
DD
=7A
=11A, R
=350V, I
=350V, I
=0 to 10V
=350V, I
≥ 2* I
=0V to 480V
=0V, V
=0V,
=350V, V
Conditions
D
* R
G
DS
=6.8 Ω
DS(on)max
D
D
D
GS
=25V,
=11A
=11A,
=11A
=0/10V,
oss
oss
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
AR
Values
1460
10.5
41.5
typ.
610
130
150
*f.
24
21
45
85
35
20
8
SPW11N60S5
6
2008-02-11
max.
225
54
30
-
-
-
-
-
-
-
-
-
-
-
nC
V
Unit
S
pF
pF
ns
DSS
DSS
.
.