SPW11N60S5 Infineon Technologies, SPW11N60S5 Datasheet - Page 5

• Manufacturer Part Number: SPW11N60S5
• Description: MOSFET N-CH 600V 11A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW11N60S5

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5.5V @ 500µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1460pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000012462; SPW11N60S5; SPW11N60S5IN; SPW11N60S5X; SPW11N60S5XK

Please note the new package dimensions arccording to PCN 2009-134-A
1 Power dissipation
P
3 Transient thermal impedance
Z
parameter: D = t
Rev. 2.4
thJC
tot
K/W
10
10
10
10
= f ( T
10
10
140
120
110
100
W
90
80
70
60
50
40
30
20
10
= f (t
-1
-2
-3
-4
0
1
0
10
0
SPW11N60S5
-7
C
p
20
)
)
10
-6
40
p
/T
10
60
-5
80
10
-4
100
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10
120
-3
°C
T
s
t
p
C
160
10
Page 5
-1
2 Safe operating area
I
parameter : D = 0 , T
4 Typ. output characteristic
I
parameter: t
D
D
= f ( V
= f ( V
10
10
10
10
10
A
A
35
25
20
15
10
-1
-2
5
0
2
1
0
10
0
DS
0
DS
); T
)
p
= 10 µs, V
5
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
j
=25°C
10
20V
12V
10V
1
10
C
=25°C
GS
SPW11N60S5
15
10
2008-02-11
2
V
DS
V
V
V
6V
DS
9V
8V
7V
10
25
3