SPW11N80C3 Infineon Technologies, SPW11N80C3 Datasheet - Page 8

• Manufacturer Part Number: SPW11N80C3
• Description: MOSFET N-CH 800V 11A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW11N80C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 680µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 100V
• Power - Max: 156W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 156000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013703; SPW11N80C3IN; SPW11N80C3X; SPW11N80C3XK; SPW11N80C3XTIN; SPW11N80C3XTIN

SPW11N80C3
Definition of diode switching characteristics
Rev. 2.9
page 8
2008-10-15
Please note the new package dimensions arccording to PCN 2009-134-A