SPW11N80C3 Infineon Technologies, SPW11N80C3 Datasheet - Page 3

• Manufacturer Part Number: SPW11N80C3
• Description: MOSFET N-CH 800V 11A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW11N80C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 680µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 100V
• Power - Max: 156W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 156000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013703; SPW11N80C3IN; SPW11N80C3X; SPW11N80C3XK; SPW11N80C3XTIN; SPW11N80C3XTIN

Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 2.9
1)
2)
3)
4)
5)
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
related
Effective output capacitance, time
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
J-STD20 and JESD22
Pulse width t
Repetitive avalanche causes additional power losses that can be calculated as P
I
C
C
SD
o(er)
o(tr)
=I
D
is a fixed capacitance that gives the same charging time as C
, di/dt=200A/µs, V
5)
6)
is a fixed capacitance that gives the same stored energy as C
p
limited by T
DClink
j,max
= 400V, V
peak
Symbol Conditions
C
C
C
C
t
t
t
t
Q
Q
Q
V
V
t
Q
I
d(on)
r
d(off)
f
rr
rrm
<V
plateau
SD
iss
oss
o(er)
o(tr)
gs
gd
g
rr
(BR)DSS
V
f =1 MHz
V
to 480 V
V
V
R
V
V
V
T
V
I
di
, T
F
j
GS
GS
DD
GS
DD
GS
GS
R
=I
G
=25 °C
F
j
page 3
<T
=400 V,
/dt =100 A/µs
=7.5 ? , T
=0 V, V
=0 V, V
=400 V,
=0/10 V, I
=640 V, I
=0 to 10 V
=0 V, I
S
jmax
=11 A,
, identical low side and high side switch
F
DS
DS
=I
j
=25 °C
D
=100 V,
=0 V
D
S
=11 A,
oss
oss
=11 A,
=11 A,
while V
while V
DS
DS
min.
is rising from 0 to 80% V
AV
is rising from 0 to 80% V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
=E
AR
*f.
Values
1600
typ.
140
550
5.5
65
50
25
15
72
10
30
64
10
33
8
1
SPW11N80C3
max.
1.2
85
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DSS.
2008-10-15
DSS.
Unit
pF
ns
nC
V
V
ns
µC
A