SPW11N80C3 Infineon Technologies, SPW11N80C3 Datasheet
SPW11N80C3
Specifications of SPW11N80C3
SPW11N80C3IN
SPW11N80C3X
SPW11N80C3XK
SPW11N80C3XTIN
SPW11N80C3XTIN
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Related parts for SPW11N80C3
SPW11N80C3 Summary of contents
Page 1
... Marking 11N80C3 Symbol Conditions =25 ° =100 ° =25 ° D,pulse 2), 2), /dt =0…640 static >1 Hz) =25 ° tot stg M2.5 screws page 1 SPW11N80C3 800 25°C 0. PG-TO247-3 Value Unit 11 A 7.1 33 470 mJ 0 V/ns ±20 V ±30 156 W -55 ... 150 °C 50 Ncm 2008-10-15 ...
Page 2
... V V GS(th =800 DSS =25 ° =800 =150 ° = GSS DS(on) =25 ° = =7 =150 ° MHz, open drain R G page 2 SPW11N80C3 Value Unit V/ns Values Unit min. typ. max 0.8 K 260 °C 800 - - V - 870 - 2 µA - 100 - - - 100 nA - 0.39 0. 1.2 ...
Page 3
... R d(off =640 plateau = = =25 ° =400 = /dt =100 A/µ rrm < <T , identical low side and high side switch peak (BR)DSS j jmax while V oss while V oss page 3 SPW11N80C3 Values Unit min. typ. max. - 1600 - 140 - - 5 1 550 - µ * rising from DSS ...
Page 4
... Please note the new package dimensions arccording to PCN 2009-134-A 2 Safe operating area =f parameter 100 125 150 1 [°C] 4 Typ. output characteristics =f parameter [s] page 4 SPW11N80C3 =25 ° limited by on-state resistance 10 µs 100 µ 100 V [V] DS =25 °C; t =10 µ 5 4 [V] DS 2008-10-15 1 µs 1000 25 ...
Page 5
... Please note the new package dimensions arccording to PCN 2009-134-A 6 Typ. drain-source on-state resistance =f(I R DS(on) parameter 1.8 5.5 V 1.6 1.4 1 [V] 8 Typ. transfer characteristics =f parameter typ 10 0 100 140 180 0 [°C] page 5 SPW11N80C3 ); T =150 ° 6 4 [A] D |>2|I |R =10 µ DS(on)max °C 150 ° [V] GS 2008-10- ...
Page 6
... Forward characteristics of reverse diode =f parameter 160 V 640 [nC] 12 Drain-source breakdown voltage =f(T V BR(DSS) 960 920 880 840 800 760 720 680 -60 100 125 150 [°C] page 6 SPW11N80C3 =10 µ 25°C (98°C) 25 °C 150°C (98%) 150 °C 0.5 1 1 =0. - 100 140 T [°C] j 2008-10-15 2 180 ...
Page 7
... Coss 1 Crss 100 200 300 400 V DS Rev. 2.9 Please note the new package dimensions arccording to PCN 2009-134-A 14 Typ. Coss stored energy = f(V E oss 500 600 700 800 0 [V] page 7 SPW11N80C3 ) 100 200 300 400 500 600 700 V [V] DS 2008-10-15 800 ...
Page 8
... Definition of diode switching characteristics Rev. 2.9 Please note the new package dimensions arccording to PCN 2009-134-A page 8 SPW11N80C3 2008-10-15 ...
Page 9
... PG-TO247-3: Outline Dimensions in mm/inches Rev. 2.9 Please note the new package dimensions arccording to PCN 2009-134-A page 9 SPW11N80C3 2008-10-15 ...
Page 10
... If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.9 Please note the new package dimensions arccording to PCN 2009-134-A page 10 SPW11N80C3 2008-10-15 ...
Page 11
New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Data ...