SPW11N80C3 Infineon Technologies, SPW11N80C3 Datasheet - Page 6

MOSFET N-CH 800V 11A TO-247

SPW11N80C3

Manufacturer Part Number
SPW11N80C3
Description
MOSFET N-CH 800V 11A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of SPW11N80C3

Package / Case
TO-247-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 7.1A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.9V @ 680µA
Gate Charge (qg) @ Vgs
85nC @ 10V
Input Capacitance (ciss) @ Vds
1600pF @ 100V
Power - Max
156W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.45 Ohm @ 10 V
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
156000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
6A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
1.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000013703
SPW11N80C3IN
SPW11N80C3X
SPW11N80C3XK
SPW11N80C3XTIN
SPW11N80C3XTIN

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPW11N80C3
Manufacturer:
Infineon
Quantity:
240
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Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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95
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 2.9
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
=f(Q
500
400
300
200
100
10
8
6
4
2
0
0
25
j
); I
0
gate
D
); I
=2.2 A; V
DD
10
D
=11 A pulsed
50
20
DD
=50 V
75
Q
30
T
gate
j
[°C]
[nC]
160 V
40
100
50
640 V
125
60
150
70
page 6
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
BR(DSS)
=f(V
960
920
880
840
800
760
720
680
10
10
10
10
SD
-1
2
1
0
-60
=f(T
); t
0
p
=10 µs
j
); I
j
-20
D
=0.25 mA
0.5
150 °C
20
V
T
SD
j
25 °C
60
[°C]
1
[V]
100
25°C (98°C)
SPW11N80C3
1.5
150°C (98%)
140
2008-10-15
180
2

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