STB19NF20 STMicroelectronics, STB19NF20 Datasheet - Page 9

• Manufacturer Part Number: STB19NF20
• Description: MOSFET N-CH 200V 15A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB19NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7941-2; STB19NF20

STB19NF20 - STF9NF20 - STP19NF20
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Figure 15. Switching times test circuit for
Figure 17. Test circuit for inductive load
Figure 19. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 16. Gate charge test circuit
Figure 18. Unclamped Inductive load test
Figure 20. Switching time waveform
circuit
Test circuit
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