STB19NF20 STMicroelectronics, STB19NF20 Datasheet - Page 4

• Manufacturer Part Number: STB19NF20
• Description: MOSFET N-CH 200V 15A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB19NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7941-2; STB19NF20

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
I
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
fs
Q
oss
rss
iss
gs
gd
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
V
V
V
V
V
(see Figure 16)
I
V
V
V
V
V
D
GS
GS
DS
DS
DD
DS
DS
GS
DS
GS
= 1mA, V
=0
=160V, I
= V
= 10V, I
=8V, I
=25V, f=1 MHz,
=10V
= Max rating,
= Max rating @125°C
= ±20V
Test conditions
Test conditions
GS
, I
D
D
= 7.5A
GS
D
D
= 7.5A
= 250µA
= 15A
STB19NF20 - STF9NF20 - STP19NF20
= 0
Min.
Min.
200
2
Typ.
11.6
Typ.
0.15
800
165
4.4
12
26
24
3
Max.
Max.
±
0.16
100
10
1
4
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
Ω
S