STB19NF20 STMicroelectronics, STB19NF20 Datasheet - Page 3

• Manufacturer Part Number: STB19NF20
• Description: MOSFET N-CH 200V 15A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB19NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7941-2; STB19NF20

STB19NF20 - STF9NF20 - STP19NF20
1
Electrical ratings
Table 1.
1. Limited by package
2. Pulse width limited by safe operating area
3. I
Table 2.
Table 3.
Symbol
Symbol
R
Symbol
dv/dt
R
I
SD
P
V
DM
R
V
V
T
thj-case
thj-pcb
E
T
I
I
TOT
I
ISO
GS
thj-a
DS
stg
T
AR
D
D
AS
≤ 15A, di/dt ≤ 300A/µs, V
J
(2)
l
(3)
Absolute maximum ratings
Thermal data
Avalanche data
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
C
=25°C)
DD
= 80%V
Parameter
Parameter
Parameter
C
= 25°C
GS
(BR)DSS
= 0)
C
C
=100°C
= 25°C
TO-220 / D²PAK
TO-220
--
9.45
0.72
15
60
90
1.39
--
-55 to 150
D²PAK
Value
Value
Value
± 20
200
50
62.5
110
300
15
15
TO-220FP
Electrical ratings
TO-220FP
9.45
60
2500
15
0.2
25
(1)
(1)
--
5
(1)
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
°C
mJ
W
°C
V
V
A
A
A
V
A
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