STB19NF20 STMicroelectronics, STB19NF20 Datasheet - Page 8

• Manufacturer Part Number: STB19NF20
• Description: MOSFET N-CH 200V 15A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB19NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7941-2; STB19NF20

Electrical characteristics
STB19NF20 - STF9NF20 - STP19NF20
Figure 13. Source-drain forward
Figure 14. Maximum avalanche energy vs
characteristics
temperature
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