SI4845DY-T1-E3 Vishay, SI4845DY-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI4845DY-T1-E3
• Description: MOSFET P-CH 20V 2.7A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4845DY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 210 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 312pF @ 10V
• Power - Max: 2.75W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.21 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 1750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -27A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 345mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4845DY-T1-E3TR

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All product specifications and data are subject to change without notice.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
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therein, which apply to these products.
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Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
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