SI4845DY-T1-E3 Vishay, SI4845DY-T1-E3 Datasheet - Page 5

MOSFET P-CH 20V 2.7A 8-SOIC

SI4845DY-T1-E3

Manufacturer Part Number
SI4845DY-T1-E3
Description
MOSFET P-CH 20V 2.7A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4845DY-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
210 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
4.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
312pF @ 10V
Power - Max
2.75W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.21 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2.1 A
Power Dissipation
1750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-27A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
345mohm
Rds(on) Test Voltage Vgs
12V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4845DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4845DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 943
Part Number:
SI4845DY-T1-E3-S
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 73415
S-51110—Rev. B, 13-Jun-05
0.01
–0.1
–0.2
0.1
0.4
0.3
0.2
0.1
0.0
10
1
1
0.00
–50
–25
Source-Drain Diode Forward Voltage
T
0.2
V
J
SD
= 150_C
0
– Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
– Temperature (_C)
25
I
D
50
0.6
= 250 mA
75
0.8
T
100
J
= 25_C
I
D
1.0
= 5 mA
0.01
_
125
0.1
10
*Limited by r
1
0.1
Safe Operating Area, Junction-to-Ambient
*V
1.2
150
New Product
GS
u minimum V
DS(on)
V
DS
– Drain-to-Source Voltage (V)
Single Pulse
1
T
A
= 25_C
GS
at which r
DS(on)
10
1.0
0.8
0.6
0.4
0.2
0.0
50
40
30
20
10
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
dc
1
0.01
V
T
GS
100
A
= 25_C
– Gate-to-Source Voltage (V)
2
Time (sec)
Vishay Siliconix
0.1
T
A
= 150_C
3
Si4845DY
www.vishay.com
1
4
10
5
5

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