SI4845DY-T1-E3 Vishay, SI4845DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4845DY-T1-E3
• Description: MOSFET P-CH 20V 2.7A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4845DY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 210 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 312pF @ 10V
• Power - Max: 2.75W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.21 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 1750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -27A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 345mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4845DY-T1-E3TR

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4
Si4845DY
Vishay Siliconix
0.5
0.4
0.3
0.2
0.1
0.0
10
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
6
4
2
0
0.0
0.0
0
I
V
D
0.5
GS
V
= 4 A
1
DS
1.3
V
= 2.5 V
DS
= 10 V
Q
Output Characteristics
g
– Drain-to-Source Voltage (V)
I
1.0
D
– Total Gate Charge (nC)
2
– Drain Current (A)
Gate Charge
2.6
V
DS
1.5
= 5 V
3
3.9
V
DS
2.0
4
= 15 V
V
GS
V
V
V
V
V
V
5.2
= 4.5 V
GS
GS
GS
GS
GS
GS
2.5
V
5
_
= 5 V
= 4.5 V
= 4 V
= 3.5 V
= 3 V
= 2.5 V
GS
= 2 V
3.0
6.5
6
New Product
450
400
350
300
250
200
150
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
50
0
–50.0 –25.0
0.00
0
On-Resistance vs. Junction Temperature
C
0.25
rss
V
V
4
DS
GS
0.50
T
0.0
Transfer Characteristics
J
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
0.75
C
25.0
Capacitance
oss
8
V
GS
T
25_C
C
1.00
50.0
C
= 4.5 V
iss
= 125_C
S-51110—Rev. B, 13-Jun-05
Document Number: 73415
12
1.25
75.0 100.0 125.0 150.0
V
GS
1.50
= 2.5 V
16
–55_C
1.75
2.00
20