si4845dy Vishay, si4845dy Datasheet
si4845dy
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... SO Top View Ordering Information: Si4845DY-T1—E3 (Lead (Pb)–Free) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T Continuous Drain Current (T = 150_C) (MOSFET) = 150_C) (MOSFET Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) ...
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... Si4845DY Vishay Siliconix Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance ...
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... S-51110—Rev. B, 13-Jun-05 New Product _ Symbol Test Condition 125_C 75_C 125_C Si4845DY Vishay Siliconix Min Typ Max Unit 0.45 0. 0.36 0.42 0.04 0.1 0 www.vishay.com 3 ...
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... Si4845DY Vishay Siliconix Output Characteristics 0.0 0.5 1.0 1.5 V – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current and Gate Voltage 0 0.3 0.2 0.1 0 – Drain Current (A) D Gate Charge 0.0 1.3 2.6 3.9 Q – Total Gate Charge (nC) g www ...
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... Safe Operating Area, Junction-to-Ambient 10 *Limited by r DS(on 25_C A Single Pulse 0.01 0 – Drain-to-Source Voltage ( minimum which Si4845DY Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 1.0 0 150_C A 0.6 0 25_C A 0.2 0 – Gate-to-Source Voltage (V) GS Single Pulse Power, Junction-to-Ambient ...
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... Si4845DY Vishay Siliconix Power De-Rating, Junction-to-Foot 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 – Case Temperature (_C) C *The power dissipation P is based 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for b J(max) cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. ...
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... Document Number: 73415 S-51110—Rev. B, 13-Jun-05 New Product _ –2 – Square Wave Pulse Duration (sec) –2 – Square Wave Pulse Duration (sec) Si4845DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120_C/W thJA (t) 3 ...
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... Si4845DY Vishay Siliconix Reverse Current vs. Junction Temperature 0 0.01 0.001 0.0001 – Junction Temperature (_C) J Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...