SI4845DY-T1-E3 Vishay, SI4845DY-T1-E3 Datasheet - Page 3
![MOSFET P-CH 20V 2.7A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4845DY-T1-E3
Manufacturer Part Number
SI4845DY-T1-E3
Description
MOSFET P-CH 20V 2.7A 8-SOIC
Manufacturer
Vishay
Datasheet
1.SI4845DY-T1-E3.pdf
(9 pages)
Specifications of SI4845DY-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
210 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
4.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
312pF @ 10V
Power - Max
2.75W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.21 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2.1 A
Power Dissipation
1750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-27A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
345mohm
Rds(on) Test Voltage Vgs
12V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4845DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4845DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 943
Part Number:
SI4845DY-T1-E3-S
Manufacturer:
VISHAY/威世
Quantity:
20 000
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Document Number: 73415
S-51110—Rev. B, 13-Jun-05
Forward Voltage Drop
Forward Voltage Drop
Maximum Reverse Leakage Current
Maximum Reverse Leakage Current
Junction Capacitance
Parameter
Symbol
I
I
C
V
V
rm
rm
F
F
T
_
New Product
V
V
Test Condition
I
F
r
r
= 30 V, T
= 1 A, T
= 30 V, T
V
V
I
F
r
r
= 30 V
= 10 V
= 1 A
J
J
J
= 125_C
= 125_C
= 75_C
Min
Vishay Siliconix
Typ
0.45
0.36
0.04
0.1
62
2
Si4845DY
Max
0.50
0.42
0.1
10
2
www.vishay.com
Unit
mA
mA
pF
V
V
3