SCH2830-TL-E SANYO, SCH2830-TL-E Datasheet - Page 4

• Manufacturer Part Number: SCH2830-TL-E
• Description: MOSFET P-CH/DIODE SCHOTTKY SCH6
• Manufacturer: SANYO

Specifications of SCH2830-TL-E

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 500 mOhm @ 500mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1A
• Gate Charge (qg) @ Vgs: 1.5nC @ 4V
• Input Capacitance (ciss) @ Vds: 115pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 6-SCH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1198-2

--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
100
1.0
0.1
1.0
10
0.8
0.6
0.4
0.2
--0.01
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
--0.1
0
0
0
0
V DD = --10V
V GS = -- 4 V
V DS = --10V
I D = --1A
0.2
20
2
2
Ambient Temperature, Ta -- °C
0.4
3
40
Total Gate Charge, Qg -- nC
Drain Current, I D -- A
Drain Current, I D -- A
3
SW Time -- I D
5
0.6
60
V GS -- Qg

t d (on)
P D -- Ta
y
7
fs -- I D
5
--0.1
0.8
80
7
100
1.0
2
--1.0
120
1.2
3
V DS = --10V
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
5
140
1.4
2
IT03505
IT03507
IT03509
IT12619
7
--1.0
160
1.6
SCH2830
3
--0.01
--0.01
--1.0
--0.1
--1.0
--0.1
100
--10
--10
10
--0.01
--0.4
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
Ta=25 °C
Single pulse
Mounted on a ceramic board (900mm
--2
2 3
--0.5
Ciss, Coss, Crss -- V DS
--4
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Diode Forward Voltage, V SD -- V
5 7
--0.6
--0.1
Operation in this
area is limited by R DS (on).
--6
--0.7
2 3
I S -- V SD
--8
A S O
--0.8
--10
5 7 --1.0
--12
--0.9
2 3
2
--14
✕0.8mm) 1unit
--1.0
5 7 --10
--16
No. A0861-4/6
[MOSFET]
[MOSFET]
[MOSFET]
PW≤10µs
V GS =0V
f=1MHz
--1.1
--18
IT03506
IT03508
IT12618
2 3
--1.2
--20