SCH2830-TL-E SANYO, SCH2830-TL-E Datasheet
SCH2830-TL-E
Specifications of SCH2830-TL-E
Related parts for SCH2830-TL-E
SCH2830-TL-E Summary of contents
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... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SCH2830 SANYO Semiconductors MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode ...
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... Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 SCH2830 Symbol Conditions I FSM 50Hz sine wave, 1 cycle Tj Tstg Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--20V =0V I GSS V GS =±8V = (off =--10V -1mA yfs =--10V -0. (on =--0 ...
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... R DS (on 1000 900 --0.5A 800 --0.3A 700 --0.1A 600 500 400 300 200 100 0 0 --2 --4 Gate-to-Source Voltage SCH2830 t rr Test Circuit [SBD] Duty≤10% 50Ω V OUT 10µs [MOSFET] --2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 --0.6 --0.7 --0 ...
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... Drain Current --4 --10V --1A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 0.2 0.4 0.6 0.8 1.0 Total Gate Charge 0.8 0.6 0.4 0 100 Ambient Temperature °C SCH2830 [MOSFET] -- --10V --1 --0 --0. --0.4 --0.5 --1.0 IT03505 [MOSFET 100 --2 IT03507 [MOSFET] -- --1.0 ...
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... Rectangular wave θ=180° (4) Sine wave θ=180° 0.1 0.2 0.3 0.4 Average Output Current FSM -- t 3.5 Current waveform 50Hz sine wave 3 2.5 2.0 1.5 1 Time SCH2830 [SBD 10000 1000 100 1.0 0 0.5 0.6 IT07927 [SBD] 7 (2) (4) (3) ...
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... Note on usage : Since the SCH2830 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...