SCH2830-TL-E SANYO, SCH2830-TL-E Datasheet - Page 2

• Manufacturer Part Number: SCH2830-TL-E
• Description: MOSFET P-CH/DIODE SCHOTTKY SCH6
• Manufacturer: SANYO

Specifications of SCH2830-TL-E

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 500 mOhm @ 500mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1A
• Gate Charge (qg) @ Vgs: 1.5nC @ 4V
• Input Capacitance (ciss) @ Vds: 115pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 6-SCH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1198-2

Continued from preceding page.
Electrical Characteristics at Ta=25°C
Package Dimensions
unit : mm (typ)
7028-003
Surge Forward Current
Junction Temperature
Storage Temperature
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
1
6
Parameter
Parameter
1.6
5
2
0.5
4
3
0.2
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
SANYO : SCH6
0.2
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Symbol
t d (on)
t d (off)
 yfs 
I FSM
I DSS
I GSS
Coss
Ciss
Crss
V SD
Tstg
Qgs
Qgd
Qg
V R
V F
I R
Tj
t rr
C
t r
t f
50Hz sine wave, 1 cycle
I D =--1mA, V GS =0V
V DS =--20V, V GS =0V
V GS =±8V, V DS =0V
V DS =--10V, I D =- -1mA
V DS =--10V, I D =- -0.5A
I D =--0.5A, V GS =- -4V
I D =--0.3A, V GS =- -2.5V
I D =--0.1A, V GS =- -1.8V
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =--10V, V GS =- -4V, I D =- -1A
V DS =--10V, V GS =- -4V, I D =- -1A
V DS =--10V, V GS =- -4V, I D =- -1A
I S =--1A, V GS =0V
I R =0.5mA
I F =0.5A
V R =15V
V R =10V, f=1MHz
I F =I R =100mA, See specified Test Circuit.
SCH2830
Conditions
Electrical Connection
Conditions
1
6
2
5
3
4
min
0.72
--0.4
--20
30
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
Top view
Ratings
typ
--0.89
Ratings
0.42
380
540
670
115
1.2
1.5
0.4
0.3
23
15
15
13
8
6
7
--55 to +125
--55 to +125
max
1000
0.48
--1.4
--1.2
±10
500
760
120
No. A0861-2/6
10
--1
3
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
nC
nC
nC
µA
°C
°C
pF
pF
pF
ns
ns
ns
ns
pF
ns
A
V
V
S
V
V
V