SI1304BDL-T1-E3 Vishay, SI1304BDL-T1-E3 Datasheet - Page 5
![MOSFET N-CH 30V 900MA SOT323-3](/photos/5/45/54567/pkg_5549_sml.jpg)
SI1304BDL-T1-E3
Manufacturer Part Number
SI1304BDL-T1-E3
Description
MOSFET N-CH 30V 900MA SOT323-3
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Specifications of SI1304BDL-T1-E3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
270 mOhm @ 900mA, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
900mA
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
2.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
100pF @ 15V
Power - Max
370mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Minimum Operating Temperature
- 55 C
Configuration
Single
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.85 A
Power Dissipation
340 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
900mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
385mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.3V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.27Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±12V
Drain Current (max)
850mA
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1304BDL-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1304BDL-T1-E3
Manufacturer:
VISHAY
Quantity:
4 513
Part Number:
SI1304BDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73480
S10-0645-Rev. C, 22-Mar-10
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
D
is based on T
T
C
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
0.4
0.3
0.2
0.1
0.0
25
50
T
C
- Case Temperature (°C)
Power, Derating
75
Vishay Siliconix
Si1304BDL
100
www.vishay.com
125
150
5