SI1304BDL-T1-E3 Vishay, SI1304BDL-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1304BDL-T1-E3
• Description: MOSFET N-CH 30V 900MA SOT323-3
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI1304BDL-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 270 mOhm @ 900mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 2.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 100pF @ 15V
• Power - Max: 370mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.85 A
• Power Dissipation: 340 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 900mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 385mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.3V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.27Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 850mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1304BDL-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73480
S10-0645-Rev. C, 22-Mar-10
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
D
is based on T
T
C
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
0.4
0.3
0.2
0.1
0.0
25
50
T
C
- Case Temperature (°C)
Power, Derating
75
Vishay Siliconix
Si1304BDL
100
www.vishay.com
125
150
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