SI1304BDL-T1-E3 Vishay, SI1304BDL-T1-E3 Datasheet - Page 3
![MOSFET N-CH 30V 900MA SOT323-3](/photos/5/45/54567/pkg_5549_sml.jpg)
SI1304BDL-T1-E3
Manufacturer Part Number
SI1304BDL-T1-E3
Description
MOSFET N-CH 30V 900MA SOT323-3
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Specifications of SI1304BDL-T1-E3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
270 mOhm @ 900mA, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
900mA
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
2.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
100pF @ 15V
Power - Max
370mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Minimum Operating Temperature
- 55 C
Configuration
Single
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.85 A
Power Dissipation
340 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
900mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
385mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.3V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.27Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±12V
Drain Current (max)
850mA
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1304BDL-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1304BDL-T1-E3
Manufacturer:
VISHAY
Quantity:
4 513
Part Number:
SI1304BDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73480
S10-0645-Rev. C, 22-Mar-10
0.6
0.5
0.4
0.3
0.2
0.1
5
4
3
2
1
0
4
3
2
1
0
0.0
0.0
0
I
D
= 0.91 A
0.5
On-Resistance vs. Drain Current
V
1
GS
V
0.5
DS
Output Characteristics
= 2.5 V
Q
g
- Drain-to-Source Voltage (V)
1.0
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
2
V
V
V
GS
1.5
1.0
GS
DS
= 4.5 V
= 5 V thru 3 V
= 15 V
3
2.0
V
DS
1.5
V
V
V
= 24 V
GS
GS
GS
4
2.5
= 2.0 V
= 1.5 V
= 2.5 V
3.0
2.0
5
180
150
120
2.0
1.5
1.0
0.5
0.0
2.0
1.7
1.4
1.1
0.8
0.5
90
60
30
0
- 50
0.0
Transfer Characteristics Curves vs. Temperature
0
On-Resistance vs. Junction Temperature
I
D
- 25
= 0.90 A
5
0.5
V
C
V
GS
0
T
rss
DS
J
- Junction Temperature (°C)
T
- Gate-to-Source Voltage (V)
10
A
- Drain-Source Voltage (V)
= 125 °C
25
1.0
Capacitance
C
V
oss
GS
T
A
T
50
15
= 4.5 V, I
A
= 25 °C
Vishay Siliconix
= - 55 °C
V
C
1.5
GS
Si1304BDL
iss
75
= 2.5 V, I
D
20
= 0.9 A
100
www.vishay.com
2.0
D
25
= 0.75 A
125
150
2.5
30
3