SI1304BDL-T1-E3 Vishay, SI1304BDL-T1-E3 Datasheet

MOSFET N-CH 30V 900MA SOT323-3

SI1304BDL-T1-E3

Manufacturer Part Number
SI1304BDL-T1-E3
Description
MOSFET N-CH 30V 900MA SOT323-3
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr

Specifications of SI1304BDL-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
270 mOhm @ 900mA, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
900mA
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
2.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
100pF @ 15V
Power - Max
370mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Minimum Operating Temperature
- 55 C
Configuration
Single
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.85 A
Power Dissipation
340 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
900mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
385mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.3V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.27Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±12V
Drain Current (max)
850mA
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1304BDL-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1304BDL-T1-E3
Manufacturer:
VISHAY
Quantity:
4 513
Part Number:
SI1304BDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 360 °C/W.
Document Number: 73480
S10-0645-Rev. C, 22-Mar-10
G
S
Ordering Information: Si1304BDL-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
1
2
(V)
SC-70 (3-LEADS)
Top View
C
= 25 °C.
0.270 at V
0.385 at V
R
Si1304BDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
DS(on)
3
GS
GS
D
(Ω)
J
= 4.5 V
= 2.5 V
= 150 °C)
b, d
N-Channel 30 V (D-S) MOSFET
Marking Code
KF
I
XX
D
0.90
0.75
Part # Code
(A)
a
Lot Traceability
and Date Code
A
Q
= 25 °C, unless otherwise noted
g
Steady State
T
T
T
T
T
T
T
T
T
T
1.1
(Typ.)
C
C
C
C
C
A
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
I
DM
I
thJA
thJF
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
315
285
G
N-Channel MOSFET
- 55 to 150
0.85
0.68
0.28
0.34
0.22
Limit
± 12
0.90
0.71
0.31
0.37
0.24
30
4
b, c
b, c
b, c
b, c
b, c
D
S
Maximum
375
340
Vishay Siliconix
Si1304BDL
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI1304BDL-T1-E3 Summary of contents

Page 1

... V GS SC-70 (3-LEADS Marking Code Top View Ordering Information: Si1304BDL-T1-E3 (Lead (Pb)-free) Si1304BDL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1304BDL Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 73480 S10-0645-Rev. C, 22-Mar- thru 2.0 2.5 3 1.5 2.0 Si1304BDL Vishay Siliconix 2.0 1.5 1 ° ° 125 °C A 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics Curves vs. Temperature 180 150 120 ...

Page 4

... Si1304BDL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.01 0.3 0 Source-to-Drain Voltage (V) SD Forward Diode Voltage vs. Temperature 1.4 1.3 1 250 µA D 1.1 1.0 0.9 0.8 0.7 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.8 0.6 0 °C J 0.2 0.9 1.2 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73480 S10-0645-Rev. C, 22-Mar-10 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si1304BDL Vishay Siliconix 0.4 0.3 0.2 0.1 0 ...

Page 6

... Si1304BDL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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