SI1304BDL-T1-E3 Vishay, SI1304BDL-T1-E3 Datasheet - Page 2
![MOSFET N-CH 30V 900MA SOT323-3](/photos/5/45/54567/pkg_5549_sml.jpg)
SI1304BDL-T1-E3
Manufacturer Part Number
SI1304BDL-T1-E3
Description
MOSFET N-CH 30V 900MA SOT323-3
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Specifications of SI1304BDL-T1-E3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
270 mOhm @ 900mA, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
900mA
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
2.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
100pF @ 15V
Power - Max
370mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Minimum Operating Temperature
- 55 C
Configuration
Single
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.85 A
Power Dissipation
340 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
900mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
385mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.3V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.27Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±12V
Drain Current (max)
850mA
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1304BDL-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1304BDL-T1-E3
Manufacturer:
VISHAY
Quantity:
4 513
Part Number:
SI1304BDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si1304BDL
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
J
a
= 25 °C, unless otherwise noted
a
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
I
C
I
DS(on)
C
V
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
I
DS
Q
Q
g
R
SM
I
t
t
t
oss
t
t
DS
rss
SD
iss
S
rr
a
b
fs
gs
gd
r
f
g
rr
g
/T
/T
J
J
I
F
I
= 0.28 A, dI/dt = 100 A/µs, T
D
V
V
V
V
DS
≅ 0.68 A, V
DS
DS
DS
= 30 V, V
V
= 15 V, V
V
= 15 V, V
= 15 V, V
V
V
V
V
V
DS
DS
V
GS
V
DS
DD
DS
GS
GS
Test Conditions
DS
= 0 V, V
= V
= 0 V, I
≥ 5 V, V
= 30 V, V
= 15 V, R
= 2.5 V, I
I
= 4.5 V, I
T
I
D
= 15 V, I
f = 1 MHz
S
C
GS
GEN
= 250 µA
GS
= 0.28 A
GS
GS
GS
= 25 °C
, I
= 0 V, T
D
GS
= 0 V, f = 1 MHz
= 4.5 V, I
= 2.5 V, I
D
= 4.5 V, R
GS
= 250 µA
GS
= 250 µA
D
L
D
D
= ± 12 V
= 4.5 V
= 22 Ω
= 0.75
= 0.9
= 0.9
= 0 V
J
= 70 °C
D
D
g
J
= 0.9
= 0.9
= 25 °C
= 1 Ω
Min.
0.6
30
4
0.216
0.308
Typ.
27.3
100
105
1.8
1.1
0.4
0.6
1.5
0.8
30
20
10
30
10
50
34
16
3
2
5
S10-0645-Rev. C, 22-Mar-10
Document Number: 73480
± 100
0.270
0.385
Max.
0.31
160
1.3
2.7
1.7
2.3
1.2
15
45
25
15
75
1
5
4
mV/°C
Unit
nA
µA
pF
nC
nC
ns
ns
ns
Ω
Ω
V
V
A
S
A
V