SI1304BDL-T1-E3 Vishay, SI1304BDL-T1-E3 Datasheet - Page 4
![MOSFET N-CH 30V 900MA SOT323-3](/photos/5/45/54567/pkg_5549_sml.jpg)
SI1304BDL-T1-E3
Manufacturer Part Number
SI1304BDL-T1-E3
Description
MOSFET N-CH 30V 900MA SOT323-3
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Specifications of SI1304BDL-T1-E3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
270 mOhm @ 900mA, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
900mA
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
2.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
100pF @ 15V
Power - Max
370mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Minimum Operating Temperature
- 55 C
Configuration
Single
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.85 A
Power Dissipation
340 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
900mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
385mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.3V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.27Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±12V
Drain Current (max)
850mA
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1304BDL-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1304BDL-T1-E3
Manufacturer:
VISHAY
Quantity:
4 513
Part Number:
SI1304BDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si1304BDL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
0.1
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
1
0.3
- 50
Forward Diode Voltage vs. Temperature
- 25
V
SD
0
- Source-to-Drain Voltage (V)
0.6
Threshold Voltage
T
J
25
- Temperature (°C)
T
J
I
D
= 150 °C
= 250 µA
50
75
0.9
0.001
0.01
T
0.1
100
10
J
1
= 25 °C
0.1
Limited by R
* V
125
GS
Single Pulse
T
A
>
1.2
150
= 25 °C
V
minimum V
1
DS
BVDSS Limited
Safe Operating Area
DS(on)
- Drain-to-Source Voltage (V)
*
GS
10
at which R
1 ms
10 ms
100 ms
1 s
10 s
DC
DS(on)
0.8
0.6
0.4
0.2
20
16
12
0
8
4
0
100
10
0
-3
is specified
Single Pulse Power, Junction-to-Ambient
10
R
-2
1
DS(on)
1000
T
V
A
GS
= 25 °C
- Gate-to-Source Voltage (V)
10
vs. V
-1
2
GS
Time (s)
S10-0645-Rev. C, 22-Mar-10
vs. Temperature
1
T
Document Number: 73480
A
T
A
= 25 °C
3
= 125 °C
10
I
D
= 0.9 A
4
100
600
5