IRLR2905TRPBF International Rectifier, IRLR2905TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLR2905TRPBF
• Description: MOSFET N-CH 55V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLR2905TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.027Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±16V
• Drain Current (max): 42A
• Power Dissipation: 110W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLR2905PBFTR

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V DS
Q
GS
t p
I AS
t p
D.U.T
0.01 Ω
L
Q
Charge
Q
GD
G
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
500
400
300
200
100
0
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
12V
25
V
V
GS
DD
Starting T , Junction Temperature (°C)
Same Type as D.U.T.
= 25V
Current Regulator
50
.2µF
Vs. Drain Current
50KΩ
3mA
J
Current Sampling Resistors
75
.3µF
I
G
100
D.U.T.
125
I
www.irf.com
D
TOP
BOTTOM
+
-
150
V
DS
17A
10A
25A
I
D
175
A