IRLR2905TRPBF International Rectifier, IRLR2905TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRLR2905TRPBF
• Description: MOSFET N-CH 55V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLR2905TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.027Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±16V
• Drain Current (max): 42A
• Power Dissipation: 110W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLR2905PBFTR

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Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
L
I
I
V
t
Q
t
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
SM
rr
on
GSS
d(on)
r
d(off)
f
S
D
fs
S
(BR)DSS
DS(on)
GS(th)
SD
max. junction temperature. ( See fig. 11 )
iss
oss
rss
rr
Repetitive rating; pulse width limited by
V
R
T
Pulse width ≤ 300µs; duty cycle ≤ 2%.
g
gs
gd
I
2
(BR)DSS
SD
J
DD
G
≤ 175°C
= 25Ω, I
≤ 25A, di/dt ≤ 270A/µs, V
= 25V, starting T
/∆T
J
AS
Internal Drain Inductance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 25A. (See Figure 12)
J
= 25°C, L =470µH
Parameter
Parameter
DD
≤ V
(BR)DSS
,
J
= 25°C (unless otherwise specified)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
1.0
–––
–––
55
21
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
…
†
‡
Caculated continuous current based on maximum allowable
Uses IRLZ44N data and test conditions.
This is applied for I-PAK, L
junction temperature;
lead and center of die contact.
0.070 –––
1700 –––
–––
–––
–––
––– 0.027
––– 0.030
––– 0.040
–––
–––
–––
–––
–––
–––
–––
–––
–––
400
150
–––
210
7.5
4.5
11
84
26
15
80
-100
–––
42 …
–––
–––
250
100
–––
–––
–––
–––
–––
–––
120
320
1.3
2.0
8.6
25
48
25
160
V/°C
nC
nC
nH
µA
nA
pF
ns
ns
W
V
V
S
V
ƒ = 1.0MHz, See Fig. 5‡
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „‡
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact†
V
V
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 25A
= 25A
= 25°C, I
Package limitation current = 20A.
= 25°C, I
= 1.1Ω, See Fig. 10 „‡
= 3.4Ω, V
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= V
= 25V, I
= 55V, V
= 44V, V
= 16V
= -16V
= 44V
= 5.0V, See Fig. 6 and 13 „‡
= 28V
= 25V
= 0V
S
of D-PAK is measured between
GS
, I
D
F
S
D
D
D
= 250µA
D
D
GS
Conditions
Conditions
= 25A
GS
GS
= 25A, V
= 250µA
= 25A‡
= 25A „
= 25A „
= 21A „
= 5.0V
= 0V
= 0V, T
D
www.irf.com
GS
= 1mA
J
= 150°C
= 0V „
G
G
S
+L
D
D
S
)
S
D