IRLR2905TRPBF International Rectifier, IRLR2905TRPBF Datasheet - Page 4

MOSFET N-CH 55V 42A DPAK

IRLR2905TRPBF

Manufacturer Part Number
IRLR2905TRPBF
Description
MOSFET N-CH 55V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRLR2905TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
27 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
48nC @ 5V
Input Capacitance (ciss) @ Vds
1700pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.027Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±16V
Drain Current (max)
42A
Power Dissipation
110W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLR2905PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLR2905TRPBF
Manufacturer:
International Rectifier
Quantity:
46 765
Part Number:
IRLR2905TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
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Company:
Part Number:
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Quantity:
4 800
Company:
Part Number:
IRLR2905TRPBF
Quantity:
20 000
Company:
Part Number:
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Quantity:
420
1000
4
2800
2400
2000
1600
1200
100
10
800
400
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
C
C
C
V
T = 175°C
V
iss
rss
oss
J
SD
0.8
DS
, Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
T = 25°C
= C
= C
= C
1.2
J
gs
ds
gd
+ C
+ C
10
gd
gd
f = 1MHz
1.6
, C
ds
SHORTED
2.0
V
GS
= 0V
2.4
100
A
A
1000
100
15
12
10
Fig 8. Maximum Safe Operating Area
9
6
3
0
1
0
1
I
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
D
C
J
= 25A
= 25°C
= 175°C
10
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
G
, Drain-to-Source Voltage (V)
20
V
V
DS
DS
BY R
30
= 44V
= 28V
10
DS(on)
40
FOR TEST CIRCUIT
SEE FIGURE 13
www.irf.com
50
60
10µs
100µs
1ms
10ms
100
70
A
A

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