IRLR2905TRPBF International Rectifier, IRLR2905TRPBF Datasheet - Page 3

MOSFET N-CH 55V 42A DPAK

IRLR2905TRPBF

Manufacturer Part Number
IRLR2905TRPBF
Description
MOSFET N-CH 55V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRLR2905TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
27 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
48nC @ 5V
Input Capacitance (ciss) @ Vds
1700pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.027Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±16V
Drain Current (max)
42A
Power Dissipation
110W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLR2905PBFTR

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1000
1000
100
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
10
10
1
1
2.0
0.1
TOP
BOTTOM 2.5V
3.0
V
V
GS
DS
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
4.0
T = 25°C
1
J
T = 175°C
J
5.0
2.5V
V
20µs PULSE WIDTH
6.0
20µs PULSE WIDTH
T = 25°C
DS
J
= 25V
10
7.0
8.0
100
9.0
A
A
1000
Fig 2. Typical Output Characteristics
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20
TOP
BOTTOM 2.5V
I
D
= 41A
T , Junction Temperature (°C)
V
J
DS
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
Vs. Temperature
, Drain-to-Source Voltage (V)
0
20
1
40
60
2.5V
80 100 120 140 160 180
20µs PULSE WIDTH
T = 175°C
J
10
V
GS
= 10V
3
100
A
A

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