IRLR2905TRPBF International Rectifier, IRLR2905TRPBF Datasheet

MOSFET N-CH 55V 42A DPAK

IRLR2905TRPBF

Manufacturer Part Number
IRLR2905TRPBF
Description
MOSFET N-CH 55V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRLR2905TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
27 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
48nC @ 5V
Input Capacitance (ciss) @ Vds
1700pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.027Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±16V
Drain Current (max)
42A
Power Dissipation
110W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLR2905PBFTR

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l
l
l
l
l
l
l
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Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Thermal Resistance
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
www.irf.com
R
R
R
I
I
I
P
V
E
I
E
dv/dt
T
T
D
D
DM
AR
STG
D
GS
AR
J
AS
θJC
θJA
θJA
For recommended footprint and soldering techniques refer to application note #AN-994
@ T
@ T
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR2905)
Straight Lead (IRLU2905)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 100°C
= 25°C
= 25°C
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
–––
HEXFET Power MOSFET
S
D
-55 to + 175
Max.
42 …
0.71
± 16
160
110
210
5.0
30
25
11
TO-252AA
R
D-Pak
DS(on)
Max.
V
110
I
1.4
50
D
DSS
= 42A…
PD- 95084A
= 0.027Ω
= 55V
TO-251AA
I-Pak
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
12/7/04

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IRLR2905TRPBF Summary of contents

Page 1

... Fully Avalanche Rated l Lead-Free l Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 100 10 2.5V 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = 25°C ...

Page 4

1MHz iss 2400 rss oss iss 2000 1600 C oss 1200 800 ...

Page 5

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 SINGLE ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • - „ • • • • P.W. Period ...

Page 8

EXAMPLE: T HIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" Note: "P" sembly line pos ition indicates "Lead-Free" INTERNATIONAL ...

Page 9

EXAMPLE: T HIS IS AN IRFU120 WIT EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" OR INT ERNAT ...

Page 10

NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS TO ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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