IRF7606TR International Rectifier, IRF7606TR Datasheet - Page 5

• Manufacturer Part Number: IRF7606TR
• Description: MOSFET P-CH 30V 3.6A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7606TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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100
1000
0.1
10
0.00001
800
600
400
200
1
0
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
Fig 8. Typical Capacitance Vs.
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V
DS
Drain-to-Source Voltage
V
C
C
C
(THERMAL RESPONSE)
, Drain-to-Source Voltage (V)
0.0001
GS
iss
rss
oss
SINGLE PULSE
= 0V,
= C
= C
= C
C
C
C
gs
ds
gd
rss
iss
oss
+ C
+ C
10
gd
gd
f = 1MHz
0.001
, C
ds
t , Rectangular Pulse Duration (sec)
SHORTED
1
0.01
100
A
0.1
20
16
12
8
4
0
0
I
D
Fig 9. Typical Gate Charge Vs.
= -2.7A
1. Duty factor D = t / t
2. Peak T = P
Notes:
5
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
G
1
J
10
DM
V
V
DS
DS
x Z
1
15
thJA
= -24V
= -15V
P
2
DM
FOR TEST CIRCUIT
+ T
10
SEE FIGURE 9
A
t
20
1
t
2
25
100
5
30
A