IRF7606TR International Rectifier, IRF7606TR Datasheet

IRF7606TR

Manufacturer Part Number

IRF7606TR

Description

MOSFET P-CH 30V 3.6A MICRO8

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7606TR.pdf (8 pages)

Specifications of IRF7606TR

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

90 mOhm @ 2.4A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

3.6A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

30nC @ 10V

Input Capacitance (ciss) @ Vds

520pF @ 25V

Power - Max

1.8W

Mounting Type

Surface Mount

Package / Case

Micro8™

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

IRF7606TR

Quantity:

10 420

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7606TRPBF

Manufacturer:

International Rectifier

Quantity:

46 641

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7606TRPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRF7606TRPBF

Quantity:

9 000

Current page: 1 of 8
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All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The new Micro8 package, with half the footprint area

of the standard SO-8, provides the smallest footprint

available in an SOIC outline. This makes the Micro8

an ideal device for applications where printed circuit

board space is at a premium. The low profile (<1.1mm)

of the Micro8 will allow it to fit easily into extremely thin

application environments such as portable electronics

and PCMCIA cards.

Absolute Maximum Ratings

Thermal Resistance

Description

only for product marked with Date Code 505 or later .

dv/dt

GSM

@ T

, T

Generation V Technology

Ultra Low On-Resistance

P-Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

Fast Switching

STG

= 25°C

= 70°C

= 25°C

= 70°C

Gate-to-Source Voltage

Gate-to-Source Voltage Single Pulse tp<10µS

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Linear Derating Factor

Soldering Temperature, for 10 seconds

Maximum Junction-to-Ambient

Parameter

„

‚

„

@ -10V

Top View

HEXFET

240 (1.6mm from case)

Micro8

-55 to + 150

Max.

± 20

-3.6

-2.9

-5.0

-30

-29

1.8

1.1

Max.

Power MOSFET

DS(on)

DSS

= -30V

= 0.09

mW/°C

Units

°C/W

V/ns

°C

Related parts for IRF7606TR

IRF7606TR Summary of contents

Page 1

... Available in Tape & Reel l l Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse ...

Page 3

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 10 20µs PULSE WIDTH -3. 25° 0 Drain-to-Source Voltage (V) DS Fig 1. ...

Page 4

I = -2.7A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 5. Normalized On-Resistance Vs. Temperature 0.14 0.12 0.10 0.08 0.06 0.04 2 Fig 7. Typical On-Resistance ...

Page 5

1MHz iss rss oss ds gd 800 C iss 600 C oss 400 C rss ...

Page 6

Package Outline Micro8 Outline Dimensions are shown in millimeters (inches 0.25 (.010 ...

Page 7

Micro8 Part Marking Information (Old) Note: This part marking information applies to devices produced before 2/26/2001. EXAMPLE : THIS IS AN IRF7501 PART NUMBER Micro8 Part Marking Information (New) Note: This part marking information applies to devices produced after 2/26/2001. ...

Page 8

Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. (12.992) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. ...

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