IRF7606TR International Rectifier, IRF7606TR Datasheet - Page 2

• Manufacturer Part Number: IRF7606TR
• Description: MOSFET P-CH 30V 3.6A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7606TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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Notes:
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
d(on)
d(off)
f
r
S
DSS
SM
rr
V
fs
GSS
2
(BR)DSS
GS(th)
iss
oss
SD
g
gs
gd
rss
DS(on)
Repetitive rating; pulse width limited by
I
rr
T
(BR)DSS
max. junction temperature. ( See fig. 10 )
SD
J
150°C
-2.4A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
-130A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
Min. Typ. Max. Units
Min. Typ. Max. Units
-1.0
––– -0.024 –––
––– 0.075 0.09
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
–––
–––
–––
2.3
„
10sec.
ƒ
Surface mounted on FR-4 board, t
140
–––
–––
–––
–––
–––
––– -100
–––
520
300
Pulse width
–––
2.1
7.6
20
13
20
43
39
43
50
0.15
-1.0
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
-1.2
-25
3.1
-29
30
11
64
76
V/°C
nC
pF
nC
ns
300µs; duty cycle
V
V
S
V
ƒ = 1.0MHz, See Fig. 8
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
J
J
= -2.4A
= -2.4A
= 25°C, I
= 25°C, I
= 6.0
= 4.0
= V
= -10V, I
= -24V, V
= -24V, V
= -24V
= 0V
= -25V
= 0V, I
= - 10V, I
= -4.5V, I
= -20V
= 20V
= -10V, See Fig. 9
= -10V
GS
Conditions
, I
D
ƒ
S
F
D
= 250µA
D
Conditions
= -2.4A, V
= -2.4A
D
D
GS
GS
= -250µA
2%.
= -1.2A
= -2.4A
= -1.2A
ƒ
= 0V
= 0V, T
www.irf.com
D
= -1mA
ƒ
ƒ
ƒ
GS
J
= 125°C
= 0V
G
ƒ
D
S