IRF7606TR International Rectifier, IRF7606TR Datasheet - Page 3

• Manufacturer Part Number: IRF7606TR
• Description: MOSFET P-CH 30V 3.6A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7606TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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100
100
10
10
1
1
3.0
0.1
Fig 3. Typical Transfer Characteristics
TOP
BOTTOM - 3.0V
Fig 1. Typical Output Characteristics
-V
-V
3.5
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
VGS
GS
DS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
4.0
T = 25°C
J
-3.0V
4.5
1
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
T = 150°C
5.0
= -10V
J
5.5
6.0
10
A
A
100
100
0.1
10
10
1
1
0.4
0.1
Fig 4. Typical Source-Drain Diode
Fig 2. Typical Output Characteristics
TOP
BOTTOM - 3.0V
T = 150°C
J
-V
-V
0.6
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
VGS
SD
DS
Forward Voltage
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.8
T = 25°C
J
1.0
1
20µs PULSE WIDTH
T = 150°C
J
1.2
-3.0V
V
1.4
GS
= 0V
3
10
1.6
A
A