IRF7606TR International Rectifier, IRF7606TR Datasheet - Page 4

• Manufacturer Part Number: IRF7606TR
• Description: MOSFET P-CH 30V 3.6A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7606TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

4
2.0
1.5
1.0
0.5
0.0
-60
Fig 5. Normalized On-Resistance
I
D
-40
= -2.7A
T , Junction Temperature (°C)
-20
J
Vs. Temperature
0
20
0.14
0.12
0.10
0.08
0.06
0.04
40
2
Fig 7. Typical On-Resistance Vs. Gate
60
80
-V
/5
100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
6
= -10V
Voltage
A
10
I = -3.6A
Fig 6. Typical On-Resistance Vs. Drain
0.3
0.2
0.1
0.0
0
14
2
A
-I
,
4
Current
, Drain Current (A)
VGS = -10V
6
VGS = -4.5V
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8
10
12
A