IRF7322D1TRPBF International Rectifier, IRF7322D1TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7322D1TRPBF
• Description: MOSFET P-CH 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7322D1TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 62 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 5.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7322D1PBFTR; IRF7322D1TRPBF; IRF7322D1TRPBFTR

IRF7322D1PbF
6
0.1
10
1
0.0
Forward Voltage Drop - V
Forward Voltage Drop - V
0.2
0.4
0.6
Schottky Diode Characteristics
T = 150°C
T = 125°C
T = 25°C
J
J
J
F
FM
(V)
0.8
(V)
1.0
.
. 1
1
. 1
Fig.14 - Maximum Allowable Ambient
1
.1
1
1
160
140
120
100
80
60
40
20
0
0.0
Temp. Vs. Forward Current
Average Forward Current - I
T = 50°C
J
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
Reverse Voltage - V (V)
4
0.5
50°C
25°C
25°C
00°C
75°C
8
1.0
1.5
12
V = 20V
R
Square wave
www.irf.com
r
thJA
2.0
16
= 62.5°C/W
F(AV)
2.5
2
DC
(A)
3.0
A