IRF7322D1TRPBF International Rectifier, IRF7322D1TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7322D1TRPBF
• Description: MOSFET P-CH 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7322D1TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 62 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 5.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7322D1PBFTR; IRF7322D1TRPBF; IRF7322D1TRPBFTR

Schottky Diode Maximum Ratings
IRF7322D1PbF
MOSFET Electrical Characteristics @ T
MOSFET Source-Drain Ratings and Characteristics
Schottky Diode Electrical Specifications
I
I
V
I
C
dv/dt
F(av)
SM
Parameter
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
Parameter
I
I
V
t
Q
RM
DSS
GSS
d(on)
d(off)
S
SM
rr
r
f
FM
t
fs
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
2
g
gs
gd
rr
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Voltage Rate of Charge
Max. Forward voltage drop
Max. Reverse Leakage current
Max. Junction Capacitance
Continuous Source Current (Body Diode) —
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Parameter
Max. Units.
-0.70
Max. Units
3600 V/ µs
Min. Typ. Max. Units
Min. Typ. Max. Units
120
0.62
0.57
0.02
0.50
0.39
2.7
-20
11
92
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2
8
J
= 25°C (unless otherwise specified)
0.049 0.062
0.082 0.098
mA
240
47
49
780
470
—
—
—
5.9
4.0
7.7
19
15
40
42
49
pF
—
—
—
—
—
—
V
-100
-1.2
-1.0
100
-2.5
-25
6.1
-21
71
73
—
—
—
29
12
22
60
63
73
—
—
—
See Fig. 14
50% Duty Cycle. Rectangular Wave, T
5µs sine or 3µs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
I
I
I
I
V
V
Rated V
F
F
F
F
R
R
= 1.0A, T
= 2.0A, T
= 1.0A, T
= 2.0A, T
= 5Vdc ( 100kHz to 1 MHz) 25°C
= 20V
nA
µA
ns
nC
pF
nC
V
Ω
V
S
ns
A
V
R
J
J
J
J
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz (see figure 5)
Conditions
= 25°C
= 25°C
= 125°C
= 125°C .
T
T
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
Conditions
T
T
di/dt = 100A/µs Â
J
J
= -2.9A
= -2.9A
= 25°C
= 125°C
J
J
= 3.4Ω Â
= 6.0Ω
Conditions
= V
= -10V, I
= -16V, V
= -16V, V
= -16V
= -15V
= 0V, I
= -4.5V, I
= -2.7V, I
= -12.0V
= 12.0V
= -4.5V (see figure 6) Â
= -10V
= 0V
= 25°C, I
= 25°C, I
GS
Conditions
, I
D
D
= -250µA
D
S
F
D
D
GS
GS
= -250µA
= -1.5A
= -2.9A, V
= -2.9A
= -2.9A ƒ
= -1.5A ƒ
= 0V
= 0V, T
Following any rated
with V
www.irf.com
T
A
A
J
RRM
= 70°C
GS
= 25°C
= 55°C
= 0V
applied
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