IRF7322D1TRPBF International Rectifier, IRF7322D1TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7322D1TRPBF
• Description: MOSFET P-CH 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7322D1TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 62 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 5.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7322D1PBFTR; IRF7322D1TRPBF; IRF7322D1TRPBFTR

IRF7322D1PbF
4
100
1400
1200
1000
0.1
10
800
600
400
200
1
0
0.2
1
-V
0.4
-V
SD
DS
V
C
C
C
,Source-to-Drain Voltage (V)
T = 150 C
J
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.6
C
C
C
= 0V,
= C
= C
= C
iss
oss
rss
gs
°
gd
ds
0.8
+ C
+ C
10
T = 25 C
gd
gd
J
f = 1MHz
, C
Power Mosfet Characteristics
1.0
°
ds
SHORTED
V
GS
1.2
= 0 V
100
1.4
A
Fig 8. Maximum Safe Operating Area
100
10
10
8
6
4
2
0
1
0.1
0
I
T
T
Single Pulse
D
C
J
= -2.9A
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-V
5
DS
Q , Total Gate Charge (nC)
°
°
G
, Drain-to-Source Voltage (V)
10
1
BY R
V
DS
15
DS(on)
= -16V
20
10
www.irf.com
100us
1ms
10ms
25
100
30
A