IRF7322D1TRPBF International Rectifier, IRF7322D1TRPBF Datasheet - Page 3
![MOSFET P-CH 20V 5.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7322D1TRPBF
Manufacturer Part Number
IRF7322D1TRPBF
Description
MOSFET P-CH 20V 5.3A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7322D1TRPBF.pdf
(8 pages)
Specifications of IRF7322D1TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
62 mOhm @ 2.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 4.5V
Input Capacitance (ciss) @ Vds
780pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
62 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 5.3 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
19 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7322D1PBFTR
IRF7322D1TRPBF
IRF7322D1TRPBFTR
IRF7322D1TRPBF
IRF7322D1TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7322D1TRPBF
Manufacturer:
GOODSKY
Quantity:
3 000
2
www.irf.com
100
0.1
100
10
10
1
1
0.1
1.5
TOP
BOTTOM
-V
2.0
-V
DS
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
2.5
T = 25 C
J
3.0
°
1
T = 150 C
3.5
J
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
-1.50V
J
DS
Power Mosfet Characteristics
= -10V
4.0
°
°
4.5
5.0
10
100
0.1
10
2.0
1.5
1.0
0.5
0.0
1
0.1
-60
TOP
BOTTOM
I
D
-40
= -2.9A
-V
T , Junction Temperature (°C)
DS
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-20
J
, Drain-to-Source Voltage (V)
0
IRF7322D1PbF
20
40
1
60
20µs PULSE WIDTH
T = 150 C
J
80
-1.50V
100 120 140 160
V
°
GS
= -4.5V
3
10
A