IRF7322D1TRPBF International Rectifier, IRF7322D1TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7322D1TRPBF
• Description: MOSFET P-CH 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7322D1TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 62 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 5.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7322D1PBFTR; IRF7322D1TRPBF; IRF7322D1TRPBFTR

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100
0.1
100
10
10
1
1
0.1
1.5
TOP
BOTTOM
-V
2.0
-V
DS
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
2.5
T = 25 C
J
3.0
°
1
T = 150 C
3.5
J
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
-1.50V
J
DS
Power Mosfet Characteristics
= -10V
4.0
°
°
4.5
5.0
10
100
0.1
10
2.0
1.5
1.0
0.5
0.0
1
0.1
-60
TOP
BOTTOM
I
D
-40
= -2.9A
-V
T , Junction Temperature (°C)
DS
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-20
J
, Drain-to-Source Voltage (V)
0
IRF7322D1PbF
20
40
1
60
20µs PULSE WIDTH
T = 150 C
J
80
-1.50V
100 120 140 160
V
°
GS
= -4.5V
3
10
A