IRF7322D1TRPBF International Rectifier, IRF7322D1TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7322D1TRPBF
• Description: MOSFET P-CH 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7322D1TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 62 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 5.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7322D1PBFTR; IRF7322D1TRPBF; IRF7322D1TRPBFTR

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100
0.1
Fig 10. Typical On-Resistance Vs. Drain
10
0.00001
1
0.8
0.6
0.4
0.2
0.0
0.50
0.20
0.10
0.05
0.02
0.01
0
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
-I , Drain Current (A)
D
Current
8
V
GS
0.001
12
Power Mosfet Characteristics
= -2.7V
V
GS
t , Rectangular Pulse Duration (sec)
1
16
= -4.5V
0.01
20
A
Fig 11. Typical On-Resistance Vs. Gate
0.08
0.07
0.06
0.05
0.04
0.03
0.1
0.0
V
1. Duty factor D = t / t
2. Peak T = P
Notes:
GS
2.0
, Gate-to-Source Voltage (V)
IRF7322D1PbF
1
J
Voltage
DM
x Z
1
4.0
thJA
P
2
I
DM
D
+ T
10
= -5.3A
A
t
1
t
6.0
2
100
5
8.0
A