APT18M100B Microsemi Power Products Group, APT18M100B Datasheet - Page 3

• Manufacturer Part Number: APT18M100B
• Description: MOSFET N-CH 1000V 18A TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT18M100B

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 700 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 4845pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT18M100BMI; APT18M100BMI

3.0
2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
25
20
15
10
16
14
12
10
Figure 7, Gate Charge vs Gate-to-Source Voltage
0
0
5
0
8
6
4
2
0
-55 -25
0
0
0
Figure 3, R
V
V
NORMALIZED TO
V
I
GS
DS(ON)
D
GS
T
20 40 60 80 100 120 140 160 180 200
= 9A
J
T
= 10V
= 10V @ 9A
= 125°C
Figure 1, Output Characteristics
J
Figure 5, Gain vs Drain Current
, JUNCTION TEMPERATURE (°C)
Q
5
2
T
g
, DRAIN-TO-SOURCE VOLTAGE (V)
J
, TOTAL GATE CHARGE (nC)
I
0
= 25°C
D
T
DS(ON)
, DRAIN CURRENT (A)
J
10
= -55°C
4
25
V
DS
vs Junction Temperature
=
V
50
15
DS
6
600V
=
240V
V
75
T
DS
J
20
8
=
= 150°C
960V
100 125 150
T
J
T
T
= -55°C
J
25
10
J
= 125°C
= 25°C
30
12
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
10,000
1,000
100
20
15
10
60
50
40
30
20
10
10
60
50
40
30
20
10
Figure 6, Capacitance vs Drain-to-Source Voltage
5
0
0
0
0
0
0
0
T
V
J
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
DS
V
V
V
= 125°C
V
DS
> I
DS
SD
1
Figure 4, Transfer Characteristics
GS
Figure 2, Output Characteristics
D(ON)
0.2
5
, DRAIN-TO-SOURCE VOLTAGE (V)
, DRAIN-TO-SOURCE VOLTAGE (V)
, SOURCE-TO-DRAIN VOLTAGE (V)
200
, GATE-TO-SOURCE VOLTAGE (V)
x R
2
DS(ON)
T
0.4
10
J
= 150°C
3
400
MAX.
T
J
V
= 125°C
0.6
GS
15
T
T
4
J
J
= 6, 7, 8 & 9V
= 25°C
T
= 25°C
J
600
= -55°C
5
20
0.8
6
800
1.0
25
C
APT18M100B_S
C
7
C
4.5V
iss
rss
oss
5V
1000
1.2
30
8