APT18M100B Microsemi Power Products Group, APT18M100B Datasheet

APT18M100B

Manufacturer Part Number

APT18M100B

Description

MOSFET N-CH 1000V 18A TO-247

Manufacturer

Microsemi Power Products Group

Datasheet

1.APT18M100B.pdf (4 pages)

Specifications of APT18M100B

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

700 mOhm @ 9A, 10V

Drain To Source Voltage (vdss)

1000V (1kV)

Current - Continuous Drain (id) @ 25° C

18A

Vgs(th) (max) @ Id

5V @ 1mA

Gate Charge (qg) @ Vgs

150nC @ 10V

Input Capacitance (ciss) @ Vds

4845pF @ 25V

Power - Max

625W

Mounting Type

Through Hole

Package / Case

TO-247

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

APT18M100BMI
APT18M100BMI

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT18M100B

Manufacturer:

Quantity:

20 000

Current page: 1 of 4
Download datasheet (118Kb)

Absolute Maximum Ratings

Thermal and Mechanical Characteristics

Symbol

Torque

Power MOS 8

A proprietary planar stripe design yields excellent reliability and manufacturability. Low

switching loss is achieved with low input capacitance and ultra low C

tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

help control slew rates during switching, resulting in low EMI and reliable paralleling,

even when switching at very high frequency. Reliability in ﬂ yback, boost, forward, and

other circuits is enhanced by the high avalanche energy capability.

FEATURES

• Fast switching with low EMI/RFI

• Low R

• Ultra low C

• Low gate charge

• Avalanche energy rated

• RoHS compliant

θ CS

θ JC

STG

DS(on)

Parameter

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current, Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds (1.6mm from case)

Package Weight

Mounting Torque ( TO-247 Package), 6-32 or M3 screw

™

rss

is a high speed, high voltage N-channel switch-mode power MOSFET.

for improved noise immunity

N-Channel MOSFET

= 25°C

Microsemi Website - http://www.microsemi.com

= 25°C

= 100°C

TYPICAL APPLICATIONS

• PFC and other boost converter

• Buck converter

• Two switch forward (asymmetrical bridge)

• Single switch forward

• Flyback

• Inverters

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"Miller" capaci-

Min

-55

APT18M100B

Single die MOSFET

1000V, 18A, 0.70Ω Max

Ratings

APT18M100B

APT18M100S

Typ

0.11

0.22

1070

±30

6.2

Max

0.20

625

150

300

1.1

APT18M100S

PAK

°C/W

in·lbf

Unit

N·m

°C

Related parts for APT18M100B

APT18M100B Summary of contents

Page 1

... Two switch forward (asymmetrical bridge) • Single switch forward • Flyback • Inverters = 25° 100° 25°C C Microsemi Website - http://www.microsemi.com APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max 3 D PAK APT18M100B APT18M100S D Single die MOSFET G S Ratings Unit ±30 1070 ...

Page 2

... 25° 100A/µ ≤ 9A, di/dt ≤1000A/µ 125° 4.7Ω 9A. AS with V OSS with V OSS = -1.41E-8 2.48E-9/V + 4.81E-11. o(er APT18M100B_S Min Typ Max I = 250µA 1000 D = 250µA 1. 0.60 0. 1mA D - 25° 125°C J ±100 Min Typ Max ...

Page 3

... DUTY CYCLE GATE-TO-SOURCE VOLTAGE (V) GS Figure 4, Transfer Characteristics 10,000 1,000 100 200 V , DRAIN-TO-SOURCE VOLTAGE (V) DS Figure 6, Capacitance vs Drain-to-Source Voltage 0 SOURCE-TO-DRAIN VOLTAGE (V) SD Figure 8, Reverse Drain Current vs Source-to-Drain Voltage APT18M100B_S = & 4. MAX. DS(ON -55° 25° 125° iss C oss C rss 400 600 ...

Page 4

... Plcs} 0.56 (.022) 0.020 (.001) 2.87 (.113) 0.178 (.007) 3.12 (.123) 2.67 (.105) 1.65 (.065) 2.84 (.112) 2.13 (.084) Gate Drain Source APT18M100B_S I DM 13µs 100µs 1ms 10ms 100ms = 150°C DC line = 25° ...

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