APT18M100B Microsemi Power Products Group, APT18M100B Datasheet - Page 2

• Manufacturer Part Number: APT18M100B
• Description: MOSFET N-CH 1000V 18A TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT18M100B

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 700 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 4845pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT18M100BMI; APT18M100BMI

Static Characteristics
Dynamic Characteristics
Source-Drain Diode Characteristics
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 C
5 C
6 R
ΔV
ΔV
Symbol
Symbol
Symbol
V
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
V
BR(DSS)
C
R
C
V
GS(th)
DS
o(cr)
o(er)
G
BR(DSS)
dv/dt
t
t
I
I
C
C
C
o(er)
V
DS(on)
GS(th)
o(cr)
Q
Q
d(on)
d(off)
I
DSS
GSS
Q
Q
g
I
SM
t
is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
t
t
oss
SD
iss
rss
S
rr
less than V
fs
gd
gs
r
f
rr
g
is defi ned as a fi xed capacitance with the same stored charge as C
is defi ned as a fi xed capacitance with the same stored energy as C
/ΔT
4
5
/ΔT
J
J
J
= 25°C, L = 26.42mH, R
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coeffi cient
Drain-Source On Resistance
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coeffi cient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Parameter
Continuous Source Current
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Recovery dv/dt
(Body Diode)
(BR)DSS,
use this equation: C
1
G
= 4.7Ω, I
3
o(er)
= -1.41E-8/V
AS
= 9A.
T
T
J
J
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
= 25°C unless otherwise specifi ed
= 25°C unless otherwise specifi ed
I
DS
SD
^2 + 2.48E-9/V
≤ 9A, di/dt ≤1000A/µs, V
I
SD
di
SD
= 9A
V
Reference to 25°C, I
Test Conditions
V
V
/
DS
dt = 100A/µs, T
GS
GS
R
V
V
G
V
GS
,
Test Conditions
V
Test Conditions
V
= 1000V
Resistive Switching
V
V
GS
= 0V
GS
= 0V
T
GS
T
I
DD
OSS
OSS
= 4.7Ω
SD
GS
DS
J
J
= 0 to 10V
= 125°C
= 0V
V
= 25°C, V
= 0V
= V
V
= 667V
= 9A
= 50V
= 10V
,
GS
with V
with V
f = 1MHz
DS
V
DS
DS
DS
,
6
,
= ±30V
= 500V
+ 4.81E-11.
I
,
,
3
V
D
,
,
I
= 0V to 667V
,
T
T
DS
V
J
DS
DS
D
I
I
,
= 250µA
D
I
D
J
J
GG
GS
= 25°C
D
DD
= 1mA
I
= 25°C
= 125°C
D
D
= 25V
G
= 9A
= 9A
= 67% of V
= 67% of V
= 9A
= 0V
= 250µA
= 15V
= 9A,
= 800V,
D
S
(BR)DSS
(BR)DSS
1000
Min
Min
Min
3
.
. To calculate C
4845
1080
405
165
150
Typ
Typ
Typ
1.15
0.60
19
65
85
26
70
22
20
75
19
24
-10
4
APT18M100B_S
o(er)
±100
Max
0.70
Max
Max
100
500
1.0
18
68
10
for any value of
5
mV/°C
V/°C
Unit
V/ns
Unit
Unit
µA
nA
nC
µC
pF
ns
ns
Ω
A
V
V
V
S