PSMN4R0-30YL,115 NXP Semiconductors, PSMN4R0-30YL,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN4R0-30YL,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R0-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 36.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 2090pF @ 12V
• Power - Max: 69W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 69 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4683-2; 934063074115; PSMN4R0-30YL T/R

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN4R0-30YL
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN4R0-30YL
Symbol
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DSM
DGR
GS
tot
DS(AL)S
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
peak drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
source
source
source
gate
mounting base; connected to drain
LFPAK
Package
Name
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 10 March 2011
Conditions
T
t
pulsed
T
V
V
see
T
T
pulsed; t
V
V
pulsed; t
p
j
j
mb
mb
GS
GS
GS
sup
≤ 25 ns; f ≤ 500 kHz; E
≥ 25 °C; T
≥ 25 °C; T
Figure 3
= 25 °C; see
= 25 °C
Simplified outline
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
p
p
N-channel 30 V 4 mΩ logic level MOSFET in LFPAK
≤ 10 µs; T
≤ 10 µs; T
SOT669 (LFPAK)
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
1 2 3 4
= 100 °C; see
= 25 °C; see
= 50 Ω; unclamped
Figure 2
= 25 °C; I
mb
mb
mb
= 25 °C;
= 25 °C
DS(AL)
GS
D
= 20 kΩ
= 99 A;
Figure 1
≤ 160 nJ;
Figure 1
PSMN4R0-30YL
Graphic symbol
Min
-
-
-
-20
-
-
-
-
-55
-55
-
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
175
175
Version
Max
30
35
30
20
76
100
396
69
99
396
41
D
S
Unit
V
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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