PSMN4R0-30YL,115 NXP Semiconductors, PSMN4R0-30YL,115 Datasheet - Page 11
![MOSFET N-CH 30V 100A LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
PSMN4R0-30YL,115
Manufacturer Part Number
PSMN4R0-30YL,115
Description
MOSFET N-CH 30V 100A LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN4R0-30YL115.pdf
(14 pages)
Specifications of PSMN4R0-30YL,115
Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
36.6nC @ 10V
Input Capacitance (ciss) @ Vds
2090pF @ 12V
Power - Max
69W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
69 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4683-2
934063074115
PSMN4R0-30YL T/R
934063074115
PSMN4R0-30YL T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PSMN4R0-30YL,115
Manufacturer:
NXP
Quantity:
20 000
NXP Semiconductors
8. Revision history
Table 7.
PSMN4R0-30YL
Product data sheet
Document ID
PSMN4R0-30YL v.4
Modifications:
PSMN4R0-30YL v.3
Revision history
20110310
20091231
Release date
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 04 — 10 March 2011
N-channel 30 V 4 mΩ logic level MOSFET in LFPAK
Change notice
-
-
PSMN4R0-30YL
Supersedes
PSMN4R0-30YL v.3
PSMN4R0-30YL v.2
© NXP B.V. 2011. All rights reserved.
11 of 14