PSMN7R0-30YL,115 NXP Semiconductors, PSMN7R0-30YL,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN7R0-30YL,115
• Description: MOSFET N-CH 30V 65A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 1270pF @ 12V
• Power - Max: 51W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 76 A
• Power Dissipation: 51 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 11 ns
• Rise Time: 39 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4686-2; 934063077115; PSMN7R0-30YL T/R

NXP Semiconductors
PSMN7R0-30YL
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(pF)
2500
2000
1500
1000
10
10
10
10
10
10
C
(A)
500
I
D
-1
-2
-3
-4
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
Input and reverse transfer capacitances as a
0
0
2
min
C
1
C
rss
iss
4
6
typ
2
V
8
All information provided in this document is subject to legal disclaimers.
GS
003aab271
003aac724
V
max
GS
(V)
(V)
10
3
Rev. 04 — 9 March 2011
N-channel 30 V 7 mΩ logic level MOSFET in LFPAK
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source threshold voltage as a function of
R
(mΩ)
V
DSon
GS (th)
(V)
16
14
12
10
8
6
4
3
2
1
0
-60
of drain current; typical values
junction temperature
0
20
0
PSMN7R0-30YL
40
max
typ
min
3.2
60
60
V
120
GS
© NXP B.V. 2011. All rights reserved.
80
(V) = 4.5
003aac722
003a a c337
T
j
I
D
(°C)
(A)
10
180
100
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