PSMN7R0-30YL,115 NXP Semiconductors, PSMN7R0-30YL,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN7R0-30YL,115
• Description: MOSFET N-CH 30V 65A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 1270pF @ 12V
• Power - Max: 51W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 76 A
• Power Dissipation: 51 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 11 ns
• Rise Time: 39 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4686-2; 934063077115; PSMN7R0-30YL T/R

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN7R0-30YL
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
R
(mΩ)
DSon
(A)
80
60
40
20
14
12
10
I
D
0
8
6
4
function of gate-source voltage; typical values
of gate-source voltage; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
2
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
4
T
j
= 150 °C
…continued
2
6
25 °C
3
8
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
V
V
DS
003aac729
003aac727
= 25 A; V
= 20 A; dI
GS
GS
Figure 17
= 20 V
(V)
(V)
10
4
Rev. 04 — 9 March 2011
GS
S
/dt = -100 A/µs; V
= 0 V; T
N-channel 30 V 7 mΩ logic level MOSFET in LFPAK
Fig 6.
Fig 8.
j
= 25 °C;
(S)
g
100
(A)
60
50
40
30
fs
I
80
60
40
20
D
0
drain current; typical values
function of drain-source voltage; typical values
Forward transconductance as a function of
Output characteristics: drain current as a
GS
0
0
= 0 V;
10
V
GS
(V) = 4.5
2
10
PSMN7R0-30YL
4
Min
-
-
-
20
6
Typ
0.88
30
22
30
© NXP B.V. 2011. All rights reserved.
8
003aac728
003aac726
I
V
D
DS
(A)
Max
1.2
-
-
2.6
2.2
3.2
2.4
2.8
(V)
3
10
40
Unit
V
ns
nC
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