BSH111,235 NXP Semiconductors, BSH111,235 Datasheet - Page 9

• Manufacturer Part Number: BSH111,235
• Description: MOSFET N-CH 55V 0.335A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH111,235

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 335mA
• Vgs(th) (max) @ Id: 1.3V @ 1mA
• Gate Charge (qg) @ Vgs: 1nC @ 8V
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056036235; BSH111 /T3; BSH111 /T3

Philips Semiconductors
9397 750 09629
Product data
Fig 13. Source (diode forward) current as a function of
T
(A)
I S
j
= 25 C and 150 C; V
0.8
0.6
0.4
0.2
source-drain (diode forward) voltage; typical
values.
0
1
0
0.4
150 C
GS
0.8
= 0 V
T j = 25 C
1.2
V SD (V)
03aa77
1.6
Rev. 02 — 26 April 2002
N-channel enhancement mode field-effect transistor
Fig 14. Gate-source voltage as a function of gate
V GS
(V)
I
D
= 0.5 A; V
4
6
2
0
8
charge; typical values.
0
DS
0.2
= 44 V
0.4
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
0.6
0.8
BSH111
Q G (nC)
03ab08
1
9 of 13