BSH111,235 NXP Semiconductors, BSH111,235 Datasheet - Page 11

• Manufacturer Part Number: BSH111,235
• Description: MOSFET N-CH 55V 0.335A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH111,235

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 335mA
• Vgs(th) (max) @ Id: 1.3V @ 1mA
• Gate Charge (qg) @ Vgs: 1nC @ 8V
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056036235; BSH111 /T3; BSH111 /T3

Philips Semiconductors
10. Revision history
Table 6:
9397 750 09629
Product data
Rev Date
02
01
20020426
20000807
Revision history
CPCN
-
-
Description
Product data (9397 750 09629)
Modifications
Product specification; initial version.
•
V
GS
data updated.
Rev. 02 — 26 April 2002
N-channel enhancement mode field-effect transistor
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
BSH111
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