BSH111,235 NXP Semiconductors, BSH111,235 Datasheet - Page 8

• Manufacturer Part Number: BSH111,235
• Description: MOSFET N-CH 55V 0.335A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH111,235

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 335mA
• Vgs(th) (max) @ Id: 1.3V @ 1mA
• Gate Charge (qg) @ Vgs: 1nC @ 8V
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056036235; BSH111 /T3; BSH111 /T3

Philips Semiconductors
9397 750 09629
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
V GS(th)
g fs
(S)
I
T
D
(V)
j
= 1 mA; V
0.4
0.3
0.2
0.1
= 25 C and 150 C; V
1.6
1.2
0.8
0.4
0.5
junction temperature.
drain current; typical values.
0
2
0
-60
0
DS
= V
0
GS
0.2
min
DS
T j = 25 C
60
150 C
I
typ
D
0.4
R
DSon
120
I D (A)
T j ( C)
03aa76
03aa38
0.6
180
Rev. 02 — 26 April 2002
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(A)
(pF)
I D
T
V
C
j
GS
10 -4
10 -5
10 -6
= 25 C; V
10 -1
10 -2
10 -3
10 2
10
gate-source voltage.
as a function of drain-source voltage; typical
values.
1
= 0 V; f = 1 MHz
10 -1
0
DS
0.4
= 5 V
min
1
0.8
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
typ
1.2
10
V DS (V)
1.6
C oss
BSH111
C iss
C rss
V GS (V)
03aa78
03aa89
10 2
2
8 of 13