FDS9958_F085 Fairchild Semiconductor, FDS9958_F085 Datasheet

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FDS9958_F085

Manufacturer Part Number
FDS9958_F085
Description
MOSFET P-CH DUAL 60A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS9958_F085

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
1020pF @ 30V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
105 m Ohms
Forward Transconductance Gfs (max / Min)
7.7 S
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 2.9 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor Corporation
FDS9958_F085 Rev.A
FDS9958
Dual P-Channel PowerTrench
-60V, -2.9A, 105mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
Qualified to AEC Q101
RoHS Compliant
, T
Symbol
Device Marking
STG
FDS9958
DS(on)
DS(on)
=105mΩ at V
=135mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Single Pulse Avalanche Energy
Power Dissipation for Dual Operation
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
D1
_F085
Pin 1
D1
GS
GS
D2
= -10V, I
= -4.5V, I
FDS9958_F085
SO-8
D2
-Pulsed
Device
D
S1
D
= -2.9A
= -2.5A
G1
T
A
= 25°C unless otherwise noted
S2
Parameter
G2
®
Package
MOSFET
SO-8
1
General Description
These P-channel logic level specified MOSFETs are produced
using Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
Load Switch
Power Management
D2
D2
D1
D1
Reel Size
7
6
8
5
330mm
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
Q 2
Q 2
Q 1
Q 1
(Note 3)
Tape Width
12mm
-55 to +150
Ratings
1
4
3
2
-2.9
±20
-60
-12
1.6
0.9
54
40
78
2
G2
S1
S2
G1
November 2008
www.fairchildsemi.com
2500units
Quantity
Units
°C/W
mJ
°C
W
V
V
A
®

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FDS9958_F085 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDS9958 FDS9958_F085 ©2008 Fairchild Semiconductor Corporation FDS9958_F085 Rev.A ® MOSFET General Description = -2.9A These P-channel logic level specified MOSFETs are produced D using Fairchild Semiconductor’s advanced PowerTrench = -2.5A ...

Page 2

... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. UIL condition: Starting T = 25° 3mH ©2008 Fairchild Semiconductor Corporation FDS9958_F085 Rev 25°C unless otherwise noted J Test Conditions I = -250µ ...

Page 3

... T JUNCTION TEMPERATURE ( J Figure 3. Normalized On- Resistance vs Junction Temperature 12 PULSE DURATION = 300 s µ DUTY CYCLE = 2.0%MAX - 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDS9958_F085 Rev 25°C unless otherwise noted -3. - µ 100 125 150 - 2 - -3. ...

Page 4

... LIMITED BY r DS(on) 0.1 SINGLE PULSE T = MAX RATED 135 C/W JA θ 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDS9958_F085 Rev 25°C unless otherwise noted 100 0.1ms 1ms 10ms 100ms 1s 10s DC 10 100 200 4 2000 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.005 - ©2008 Fairchild Semiconductor Corporation FDS9958_F085 Rev 25°C unless otherwise noted J SINGLE PULSE 135 C/W JA θ RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK T ...

Page 6

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDS9958_F085 Rev.A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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