FDC6020C Fairchild Semiconductor, FDC6020C Datasheet - Page 5

• Manufacturer Part Number: FDC6020C
• Description: MOSFET N/P-CHAN 20V COMPL 6SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6020C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.9A, 4.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 677pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT FLMP, SuperSOT-6 FLMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6020CTR; FDC6020C_NL; FDC6020C_NLTR; FDC6020C_NLTR

Typical Characteristics : Q1
0.01
100
0.1
10
5
4
3
2
1
0
1
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate Charge Characteristics.
0
I
D
R
SINGLE PULSE
= -4.2A
R
DS(ON)
θJA
1
V
T
GS
A
= 102
= 25
= -4.5V
LIMIT
2
o
o
C/W
C
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
3
Q
1
g
, GATE CHARGE (nC)
DC
1s
4
100ms
V
10ms
DS
5
1ms
= -5V
100µs
6
10
10µs
-15V
7
8
-10V
9
100
1100
1000
900
800
700
600
500
400
300
200
100
10
0
8
6
4
2
0
Figure 8. Capacitance Characteristics.
0.01
0
Figure 10. Single Pulse Maximum
C
RSS
C
OSS
0.1
4
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
8
1
t
1
, TIME (sec)
12
10
SINGLE PULSE
R
θJA
16
T
FDC6020C RevB (W)
100
A
= 102°C/W
f = 1 MHz
V
= 25°C
GS
= 0 V
20
1000